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| 2010. 9. 28 1/1 semiconductor technical data MBRF10U200CTA schottky barrier type diode revision no : 0 switching mode power supply application. converter & chopper application. features h average output rectified current : i o =10a. h repetitive peak reverse voltage : v rrm =200v. h fast reverse recovery time : t rr =35ns. maximum rating (ta=25 ? ) 1. anode 2. cathode 3. anode to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ characteristic symbol rating unit repetitive peak reverse voltage v rrm 200 v average output rectified current (tc=118 ? ) (note) i o 10 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 100 a junction temperature t j -40 q 150 ? storage temperature range t stg -55 q 150 ? note : average forward current of centertap full wave connection. 3 y m electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =5a - - 0.95 v repetitive peak reverse current (note) i rrm v rrm =rated - - 50 u reverse recovery time (note) t rr i f =1.0a, di/dt=-30a/ k - - 35 ns thermal resistance (note) r th(j-c) juction to case - - 4.5 ? /w note : a value of one cell
2010. 9. 28 2/2 MBRF10U200CTA revision no : 0 reverse current i r ( ? ) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) forward current i f (a) 0 0.2 0.1 0.4 0.6 0.8 1.0 0 1 10 100 20 40 60 80 0.1 1 10 100 1000 10000 220 120 140 160 180 200 100 j t =25 c j t =75 c t =125 c j t =25 c t =125 c j j t =75 c |
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